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Development of the HiSIM-IGBT Model for EV/HV Electric Circuit Simulation
evtec11/20117251

Authors

Masuhisa Hirose, Kimimori Hamada - Toyota Motor Corporation
Kanade Shizuku - Toyota Technical Development Corporation
Masataka Miyake, Mitiko Miura-Mattausch, Hans Juergen Mattausch, Uwe Feldmann - Hiroshima University

Abstract

An IGBT model for use in circuit simulations (called the “HiSIM-IGBT model” below) has been developed that can be applied to the design of electrical characteristics occurring in accordance with the complex control methods adopted by the power converters of electric and hybrid vehicles. Since the HiSIM-IGBT model expresses carrier behavior inside the IGBT with physical formulas, electrical characteristics can be simulated with high accuracy, enabling very precise and rapid design of electrical characteristics using IGBTs.

KEYWORDS: IGBT, HiSIM, compact model, physical formula, surface potential

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