Abstract
The intelligent power IC (henceforth IPIC) is the composite IC that integrates the power devices and the analogue and digital devices for the control circuits in single-chip. In the automotive application, the toughness against an automotive environmental conditions (e.g. high temperature operation and high withstand voltage) and high amount of serge robustness (ESD: Electro Static Discharge >15 kV/mm2) are required for the IPIC. As the method of making IPIC, using the thick film SOI (Silicon On Insulator) wafer and separating each device on the chip with the trenches (henceforth trench dielectric isolation method: TD for short) is the most excellent. The reason is that the IPIC made by TD method has no parasitic operation such as latch-up, and hence it has desirable toughness against an automotive environmental condition (1-3). For the other demand of ESD robustness, it has not been achieved by the prior art. In this paper, we have proposed the novel structure of the power device using TD technology, and developed the power device that filled high ESD robustness grater than 15 kV/mm2 and low on-state resistance, and have realized the IPIC that need not use the external protection devices. Based on this technology, we have developed and arranged several devices with high ESD robustness, and the high reliable automotive IPIC have been produced.
Keywords - SOI, Trench, ESD, Power IC, BiCDMOS